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J-GLOBAL ID：200902145607676968   Reference number：97A0581765

Luminescences from localized states in InGaN epilayers.

InGaNエピ層の局在状態によるルミネセンス
Author (4)：
CHICHIBU S

About CHICHIBU S

(Sci. Univ. Tokyo, Noda, JPN)

About Sci. Univ. Tokyo, Noda, JPN

, 
AZUHATA T

About AZUHATA T

(Waseda Univ., Tokyo, JPN)

About Waseda Univ., Tokyo, JPN

, 
SOTA T

About SOTA T

(Waseda Univ., Tokyo, JPN)

About Waseda Univ., Tokyo, JPN

, 
NAKAMURA S

About NAKAMURA S

(Nichia Chemical Ind., Ltd., Tokushima, JPN)

About Nichia Chemical Ind., Ltd., Tokushima, JPN


Material：
Applied Physics Letters  (Appl Phys Lett)

About Applied Physics Letters


Volume： 70  Issue： 21  Page： 2822-2824  Publication year： May. 26, 1997 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)
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light emitting diode

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,...
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JST classification (1)：
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Luminescence of semiconductors 
(BM08092S)

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Terms in the title (4)：
Terms in the title
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InGaN

About InGaN

, 
エピ層

About エピ層

, 
局在状態

About 局在状態

, 
ルミネセンス

About ルミネセンス


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