Dielectric characteristics of Al2O3-HfO2 nanolaminates on Si(100).

CHO M-H; ROH Y S; JEONG K; CHOI H J; NAM S W; KO D-H; LEE J H; LEE N I; FUJIHARA K

Art

J-GLOBAL ID：200902145921545894 Reference number：02A0667224

Dielectric characteristics of Al₂O₃-HfO₂ nanolaminates on Si(100).

Si(100)上にナノラミネートしたAl₂O₃-HfO₂の誘電特性

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Material：
Volume： 81 Issue： 6 Page： 1071-1073 Publication year： Aug. 05, 2002
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Metal-insulator-semiconductor structures , Oxide thin films , Transistors

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