Art
J-GLOBAL ID：200902146087855330   Reference number：00A0858649

A formation mechanism of carbon nanotube films on SiC(0001).

SiC(0001)上のカーボンナノチューブの形成機構
Author (5)：
KUSUNOKI M

About KUSUNOKI M

(Japan Fine Ceramics Center, Nagoya, JPN)

About Japan Fine Ceramics Center, Nagoya, JPN

, 
SUZUKI T

About SUZUKI T

(Japan Fine Ceramics Center, Nagoya, JPN)

About Japan Fine Ceramics Center, Nagoya, JPN

, 
HIRAYAMA T

About HIRAYAMA T

(Japan Fine Ceramics Center, Nagoya, JPN)

About Japan Fine Ceramics Center, Nagoya, JPN

, 
SHIBATA N

About SHIBATA N

(Japan Fine Ceramics Center, Nagoya, JPN)

About Japan Fine Ceramics Center, Nagoya, JPN

, 
KANEKO K

About KANEKO K

(Univ. Tokyo, JPN)

About Univ. Tokyo, JPN


Material：
Applied Physics Letters  (Appl Phys Lett)

About Applied Physics Letters


Volume： 77  Issue： 4  Page： 531-533  Publication year： Jul. 24, 2000 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
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*silicon carbide

About silicon carbide

,...
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Atomic and molecular clusters 
(BH09030O)

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,  Semiconductor thin films 
(BK14040E)

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Terms in the title (2)：
Terms in the title
Keywords automatically extracted from the title.
SiC

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, 
カーボンナノチューブ

About カーボンナノチューブ


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