Art
J-GLOBAL ID:200902146171988400   Reference number:94A0029431

Sensitized Layered Metal Oxide Semiconductor Particles for Photochemical Hydrogen Evolution from Nonsacrificial Electron Donors.

非犠牲的電子ドナーからの光化学的水素発生のための増感層をもつ金属酸化物半導体粒子
Author (4):
Material:
Volume: 97  Issue: 45  Page: 11802-11810  Publication year: Nov. 11, 1993 
JST Material Number: C0334A  ISSN: 0022-3654  CODEN: JPCHAX  Document type: Article
Article type: 原著論文  Country of issue: United States (USA)  Language: ENGLISH (EN)
Thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
,...
   To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=94A0029431&from=J-GLOBAL&jstjournalNo=C0334A") }}
JST classification (1):
JST classification
Category name(code) classified by JST.
Photochemistry in general 

Return to Previous Page