Art
J-GLOBAL ID：200902148025080423
Reference number：99A0703204
Growth of GaN Single Crystals under High Nitrogen Pressures and their Characterization.
高窒素圧下におけるGaN単結晶の成長とその特性評価
-
Publisher site
Copy service
{{ this.onShowCLink("http://jdream3.com/copy/?sid=JGLOBAL&noSystem=1&documentNoArray=99A0703204©=1") }}
-
Access JDreamⅢ for advanced search and analysis.
{{ this.onShowJLink("http://jdream3.com/lp/jglobal/index.html?docNo=99A0703204&from=J-GLOBAL&jstjournalNo=B0738A") }}
Author (1)：
Material：
Volume：
34
Issue：
5/6
Page：
785-795
Publication year：
1999
JST Material Number：
B0738A
ISSN：
0232-1300
Document type：
Article
Article type：
文献レビュー
Country of issue：
United States (USA)
Language：
ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
,...
JST classification (1)：
JST classification
Category name(code) classified by JST.
Crystal growth of semiconductors
Terms in the title (5)：
Terms in the title
Keywords automatically extracted from the title.
,
,
,
,
Return to Previous Page
