Electrical characterization of thin Al<sub>2</sub>O<sub>3</sub> films grown by atomic layer deposition on silicon and various metal substrates.

GRONER M D; ELAM J W; FABREGUETTE F H; GEORGE S M

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J-GLOBAL ID：200902149140487797 Reference number：02A0674223

Electrical characterization of thin Al₂O₃ films grown by atomic layer deposition on silicon and various metal substrates.

シリコンおよび各種金属基板上の原子層堆積により成長させたAl₂O₃薄膜の電気特性評価

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Material：
Volume： 413 Issue： 1/2 Page： 186-197 Publication year： Jun. 24, 2002
JST Material Number： B0899A ISSN： 0040-6090 Document type： Article
Article type：原著論文 Country of issue： Netherlands (NLD) Language： ENGLISH (EN)

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Oxide thin films , Metal-insulator-semiconductor structures

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Electrical characterization of thin Al2O3 films grown by atomic layer deposition on silicon and various metal substrates.

Electrical characterization of thin Al₂O₃ films grown by atomic layer deposition on silicon and various metal substrates.