Internal Photoemission and X-Ray Photoelectron Spectroscopic Studies of Sulfur-Passivated GaAs.

SATO K; IKOMA H

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J-GLOBAL ID：200902149598834470 Reference number：93A0308304

Internal Photoemission and X-Ray Photoelectron Spectroscopic Studies of Sulfur-Passivated GaAs.

硫黄で不動態化したGaAsの内部光電子放出およびX線光電子放出分光による研究

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Author (2)： ,
Material：
Volume： 32 Issue： 2 Page： 921-929 Publication year： Feb. 1993
JST Material Number： G0520B ISSN： 0021-4922 Document type： Article
Article type：原著論文 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Surface structure of semiconductors , Semiconductor-metal contacts

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