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Art
J-GLOBAL ID:200902150303551690   Reference number:97A0795465

Effect of inner-shell excitation of disilane on the reaction yield of synchrotron-radiation excited high-vacuum chemical vapor deposition.

シンクロトロン放射励起による高真空化学蒸着の反応収率に対するジシラン内殻励起の効果
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Volume: 82  Issue:Page: 1482-1484  Publication year: Aug. 01, 1997
JST Material Number: C0266A  ISSN: 0021-8979  CODEN: JAPIAU  Document type: Article
Article type: 短報  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Semiconductor thin films 

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