Advantage of Radical Oxidation for Improving Reliability of Ultra-Thin Gate Oxide.

SAITO Y; SEKINE K; UEDA N; HIRAYAMA M; SUGAWA S; OHMI T

Art

J-GLOBAL ID：200902150753954892 Reference number：00A0897589

Advantage of Radical Oxidation for Improving Reliability of Ultra-Thin Gate Oxide.

超薄ゲート酸化膜の信頼性改善のためのラジカル酸化の利点

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Author (6)： , , , , ,
Material：
Volume： 2000 Page： 176-177 Publication year： 2000
JST Material Number： A0035B ISSN： 0743-1562 Document type： Proceedings
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Manufacturing technology of solid-state devices , Measurement,testing and reliability of solid-state devices , Applications of plasma

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