Enhanced strain relaxation of epitaxial SiGe layers on Si(100) after H<sup>+</sup> ion implantation.

HOLLAENDER B; MANTL S; LIEDTKE R; MESTERS S; HERZOG H J; KIBBEL H; HACKBARTH T

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J-GLOBAL ID：200902151139788460 Reference number：99A0289144

Enhanced strain relaxation of epitaxial SiGe layers on Si(100) after H⁺ ion implantation.

H⁺注入後のSi(100)上エピタクシーSiGe層の歪緩和増強

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Volume： 148 Issue： 1/4 Page： 200-205 Publication year： Jan. 1999
JST Material Number： H0899A ISSN： 0168-583X Document type： Article
Article type：原著論文 Country of issue： Netherlands (NLD) Language： ENGLISH (EN)

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Irradiational changes semiconductors

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Enhanced strain relaxation of epitaxial SiGe layers on Si(100) after H+ ion implantation.

Enhanced strain relaxation of epitaxial SiGe layers on Si(100) after H⁺ ion implantation.