Improved Current Performance of CMOSFETs with Nitrogen Incorporated HfO2-Al2O3 Laminate Gate Dielectric.

JUNG H-S; KIM Y-S; RYU H J; OH C-B; CHO K-H; BAIK H-S; CHUNG Y S; CHANG H S; MOON D W

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J-GLOBAL ID：200902151428260740 Reference number：03A0088509

Improved Current Performance of CMOSFETs with Nitrogen Incorporated HfO₂-Al₂O₃ Laminate Gate Dielectric.

窒素を含んだHfO₂-Al₂O₃積層ゲート誘電体を有するCMOSFETの改善された電流性能

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Material：
Volume： 2002 Page： 853-856 Publication year： 2002
JST Material Number： C0829B ISSN： 0163-1918 Document type： Proceedings
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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