1.3μm photoluminescence from InGaAs quantum dots on GaAs.

MIRIN R P; IBBETSON J P; NISHI K; GOSSARD A C; BOWERS J E

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J-GLOBAL ID：200902152165664961 Reference number：96A0107339

1.3μm photoluminescence from InGaAs quantum dots on GaAs.

GaAs上のInGaAs量子ドットからの1.3μm光ルミネセンス

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Author (5)： , , , ,
Material：
Volume： 67 Issue： 25 Page： 3795-3797 Publication year： Dec. 18, 1995
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor thin films , Luminescence of semiconductors

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