Ultralow-threshold (50A/cm<sup>2</sup>) strained single-quantum-well GaInAsSb/AlGaAsSb lasers emitting at 2.05μm.

TURNER G W; CHOI H K; MANFRA M J

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J-GLOBAL ID：200902152487451114 Reference number：98A0329715

Ultralow-threshold (50A/cm²) strained single-quantum-well GaInAsSb/AlGaAsSb lasers emitting at 2.05μm.

2.05μmで発光する超低しきい値(50A/cm²)の歪単一量子井戸GaInAsSb/AlGaAsSbレーザ

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Volume： 72 Issue： 8 Page： 876-878 Publication year： Feb. 23, 1998
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor lasers

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Ultralow-threshold (50A/cm2) strained single-quantum-well GaInAsSb/AlGaAsSb lasers emitting at 2.05μm.

Ultralow-threshold (50A/cm²) strained single-quantum-well GaInAsSb/AlGaAsSb lasers emitting at 2.05μm.