Rapid evaluation of dislocation densities in n-type GaN films using photoenhanced wet etching.

YOUTSEY C; ROMANO L T; MOLNAR R J; ADESIDA I

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J-GLOBAL ID：200902152838312086 Reference number：99A0624623

Rapid evaluation of dislocation densities in n-type GaN films using photoenhanced wet etching.

光促進湿式エッチングによるn型GaN膜中の転位密度の短時間評価

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Material：
Volume： 74 Issue： 23 Page： 3537-3539 Publication year： Jun. 07, 1999
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Lattice defects in semiconductors

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