Microwave and Millimeterwave High-power Devices. Improvement of Adjacent Channel Leakage Power and Intermodulation Distortion by Using a GaAs FET Linearizer with a Large Source Inductance.

MORI K; YAMAUCHI K; NAKAYAMA M; ITOH Y; TAKAGI T; KUREBAYASHI H

Art

J-GLOBAL ID：200902154391423988 Reference number：97A0667315

Microwave and Millimeterwave High-power Devices. Improvement of Adjacent Channel Leakage Power and Intermodulation Distortion by Using a GaAs FET Linearizer with a Large Source Inductance.

マイクロ波およびミリ波高電力デバイス特集大きなソースインダクタンスをもつGaAs FETリニアライザを用いたことによる隣接チャネル漏れ電力と相互変調ひずみの改善

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Material：
Volume： E80-C Issue： 6 Page： 775-781 Publication year： Jun. 1997
JST Material Number： L1370A ISSN： 0916-8524 Document type： Article
Article type：原著論文 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Amplification circuits

Reference (12)：

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NOJIMA, T. Extremely low-distortion multi-carrier amplifier for mobile communication systems-Self-adjusting feed-forward amplifier. IEICE Technicak Report. 1990
WRIGHT, A. S. Experimental perfoemance of an adaptive digital linearized power amplifier. IEEE Trans. Veh. Technol. 1992, 41, 4, 395-400
HAYASHI, H. Quasi-linear amplification using self phase distortion compensation technique. IEEE Trans. Microwave Theory & Tech. 1995, 43, 11, 2557-2564
NAKAYAMA, M. A novel amplitude and phase linearizing technique for microwave power amplifiers. IEEE Microwave Theory and Techniques Symposium Digest. 1995, 1451-1454

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