High-quality SiO<sub>2</sub> film formation by highly concentrated ozone gas at below 600°C.

NISHIGUCHI T; NONAKA H; ICHIMURA S; MORIKAWA Y; KEKURA M; MIYAMOTO M

Art

J-GLOBAL ID：200902154933456985 Reference number：02A0776755

High-quality SiO₂ film formation by highly concentrated ozone gas at below 600°C.

600°C以下における高濃度オゾンガスによる高品質SiO₂膜形成

Publisher site Copy service {{ this.onShowCLink("http://jdream3.com/copy/?sid=JGLOBAL&noSystem=1&documentNoArray=02A0776755&COPY=1") }}
Access JDreamⅢ for advanced search and analysis. {{ this.onShowJLink("http://jdream3.com/lp/jglobal/index.html?docNo=02A0776755&from=J-GLOBAL&jstjournalNo=H0613A") }}

Author (6)： , , , , ,
Material：
Volume： 81 Issue： 12 Page： 2190-2192 Publication year： Sep. 16, 2002
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

,...

To see more with JDream III (charged). {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=02A0776755&from=J-GLOBAL&jstjournalNo=H0613A") }}

Oxide thin films

, , , ,

Return to Previous Page

High-quality SiO2 film formation by highly concentrated ozone gas at below 600°C.

High-quality SiO₂ film formation by highly concentrated ozone gas at below 600°C.