Art

J-GLOBAL ID：200902155604139290   Reference number：99A0586592

Characterization of ZnSe/GaAs heteroepitaxial interfaces by X-ray reflectivity measurement near the absorption edges.

Author (9)： TAKASE A (Sci. Univ. Tokyo, Noda-shi, JPN) ,  KURIBAYASHI M (Sci. Univ. Tokyo, Noda-shi, JPN) ,  ISHIDA K (Sci. Univ. Tokyo, Noda-shi, JPN) ,  KIMURA K (Joint Res. Center for Atom Technol.(JRCAT), Tsukuba, JPN) ,  KUO L-H (Joint Res. Center for Atom Technol.(JRCAT), Tsukuba, JPN) ,  YASUDA T (Joint Res. Center for Atom Technol.(JRCAT), Tsukuba, JPN) ,  MIWA S (Angstrom Technol. Partnership(ATP), Tsukuba, JPN) ,  TOMITA H (Fujitsu Lab. Ltd., Atsugi, JPN) ,  KOMIYA S (Fujitsu Lab. Ltd., Atsugi, JPN)
Material： KEK Progress Report  (KEK Prog Rep)
Issue： 98-3  Page： 242  Publication year： Nov. 1998 
JST Material Number： Y0762A  ISSN： 1344-6320  Document type： Article
Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Terms in the title (2)： ZnSe ,  GaAs