GaN synthesis by ammonothermal method.

DWILINSKI R; WYSMOLEK A; BARANOWSKI J; KAMINSKA M; DORADZINSKI R; GARCZYNSKI J; SIERZPUTOWSKI L; JACOBS H

Art

J-GLOBAL ID：200902156045891854 Reference number：96A0044947

GaN synthesis by ammonothermal method.

アンモニア熱法によるGaNの合成

Publisher site Copy service {{ this.onShowCLink("http://jdream3.com/copy/?sid=JGLOBAL&noSystem=1&documentNoArray=96A0044947&COPY=1") }}
Access JDreamⅢ for advanced search and analysis. {{ this.onShowJLink("http://jdream3.com/lp/jglobal/index.html?docNo=96A0044947&from=J-GLOBAL&jstjournalNo=A0319A") }}

Author (8)： , , , , , , ,
Material：
Volume： 88 Issue： 5 Page： 833-836 Publication year： Nov. 1995
JST Material Number： A0319A ISSN： 0587-4246 CODEN： APTLBW Document type： Article
Article type：原著論文 Country of issue： Poland (POL) Language： ENGLISH (EN)

,...

To see more with JDream III (charged). {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=96A0044947&from=J-GLOBAL&jstjournalNo=A0319A") }}

Crystal growth of semiconductors

Return to Previous Page