In situ annealing treatment and In-doping of GaN epilayers grown by MOVPE.

LU D-C; WANG C; YUAN H; LIU X; WANG X

Art

J-GLOBAL ID：200902156515982045 Reference number：01A0271103

In situ annealing treatment and In-doping of GaN epilayers grown by MOVPE.

MOVPEにより成長させたGaNエピ層のその場熱処理とInドーピング

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Author (5)： , , , ,
Material：
Volume： 221 Page： 356-361 Publication year： Dec. 2000
JST Material Number： B0942A ISSN： 0022-0248 Document type： Article
Article type：原著論文 Country of issue： Netherlands (NLD) Language： ENGLISH (EN)

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Semiconductor thin films

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