Art
J-GLOBAL ID：200902156634481909   Reference number：94A0212955

New low current memory modes with giant magneto-resistance materials.

巨大磁気抵抗効果材料の新しい低電流メモリモード
Author (4)：
RANMUTHU K T M

About RANMUTHU K T M

(Iowa State Univ., IA)

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, 
POHM A V

About POHM A V

(Nonvolatile Electronics, MN)

About Nonvolatile Electronics, MN

, 
DAUGHTON J M

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(Nonvolatile Electronics, MN)

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, 
COMSTOCK C S

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(Iowa State Univ., IA)

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Material：
IEEE Transactions on Magnetics  (IEEE Trans Magn)

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Volume： 29  Issue： 6 Pt 1  Page： 2593-2595  Publication year： Nov. 1993 
JST Material Number： A0339B  ISSN： 0018-9464  CODEN： IEMGAQ  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)
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magneto resistive device

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,...
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Magnetic domain and magnetization process in general 
(BM06111M)

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,  Magnetoelectric devices 
(NC03100X)

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巨大磁気抵抗効果

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