Low resistivity (~10<sup>-5</sup>Ωcm<sup>2</sup>) ohmic contacts to 6H silicon carbide fabricated using cubic silicon carbide contact layer.

DMITRIEV V A; IRVINE K; SPENCER M; KELNER G

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J-GLOBAL ID：200902157878774688 Reference number：94A0167488

Low resistivity (~10^-5Ωcm²) ohmic contacts to 6H silicon carbide fabricated using cubic silicon carbide contact layer.

立方晶炭化けい素接触層を用いて作製した6H炭化けい素に対する低抵抗率(~10^-5Ωcm²)Ohm接触

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Material：
Volume： 64 Issue： 3 Page： 318-320 Publication year： Jan. 17, 1994
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor-metal contacts

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Low resistivity (~10-5Ωcm2) ohmic contacts to 6H silicon carbide fabricated using cubic silicon carbide contact layer.

Low resistivity (~10^-5Ωcm²) ohmic contacts to 6H silicon carbide fabricated using cubic silicon carbide contact layer.