Art
J-GLOBAL ID：200902158324630745
Reference number：97A0833678
A Three-Parameters-Only MOSFET Subthreshold Current CAD Model Considering Back-Gate Bias and Process Variation.
バックゲートバイアスとプロセスの変動を考慮した,3-パラメータに限定したMOSFETのサブスレッショルド電流のCADモデル
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Author (2)：
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Material：
Volume：
16
Issue：
4
Page：
343-352
Publication year：
Apr. 1997
JST Material Number：
B0142C
ISSN：
0278-0070
CODEN：
ITCSDI
Document type：
Article
Article type：
原著論文
Country of issue：
United States (USA)
Language：
ENGLISH (EN)
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Semiconductor integrated circuit
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