Art

J-GLOBAL ID：200902159209790735   Reference number：96A0366307

Deep level transient spectroscopic and Hall effect investigation of the position of the vanadium acceptor level in 4H and 6H SiC.

4H及び6H-SiC中のバナジウムアクセプタ準位の位置の深準位過渡分光とHall効果による研究

Author (7)： JENNY J R (Carnegie-Mellon Univ., Pennsylvania) ,  SKOWRONSKI J (Carnegie-Mellon Univ., Pennsylvania) ,  MITCHEL W C (Wright Lab., Ohio) ,  HOBGOOD H M (Westinghouse Sci. and Technol. Center, Pennsylvania) ,  GLASS R C (Westinghouse Sci. and Technol. Center, Pennsylvania) ,  AUGUSTINE G (Westinghouse Sci. and Technol. Center, Pennsylvania) ,  HOPKINS R H (Westinghouse Sci. and Technol. Center, Pennsylvania)
Material： Applied Physics Letters  (Appl Phys Lett)
Volume： 68  Issue： 14  Page： 1963-1965  Publication year： Apr. 01, 1996 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： silicon carbide ,...

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JST classification (2)： Electronic structure of impurites and defects  (BM02100I) ,  Lattice defects in semiconductors  (BK12040Q)

Terms in the title (6)： 6H-SiC ,  バナジウム ,  アクセプタ準位 ,  深準位過渡分光 ,  Hall効果 ,  研究