Monolithically Integrated 780-nm-Band High-Power and 650-nm-Band Laser Diodes with Teal Refractive Index Guided Self-Aligned Structure.

ONISHI T; IMAFUJI O; FUKUHISA T; MOCHIDA A; KOBAYASHI Y; YURI M; ITOH K; SHIMIZU H

Art

J-GLOBAL ID：200902159612017124 Reference number：01A0724263

Monolithically Integrated 780-nm-Band High-Power and 650-nm-Band Laser Diodes with Teal Refractive Index Guided Self-Aligned Structure.

真の屈折率でガイドされた自己整合構造を持つモノリシック集積した780nm帯高出力レーザダイオードと650nm帯レーザダイオード

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Author (8)： , , , , , , ,
Material：
Volume： 13 Issue： 6 Page： 550-552 Publication year： Jun. 2001
JST Material Number： T0721A ISSN： 1041-1135 CODEN： IPTLEL Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor lasers

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