Art
J-GLOBAL ID：200902159653037601   Reference number：95A0772562

Bulk Lattice Instability in II-VI Semiconductors and Its Effect on Impurity Compensation.

II-VI半導体のバルク格子不安定性とその不純物補償への影響
Author (2)：
PARK C H

About PARK C H

(NEC Res. Inst., New Jersey)

About NEC Res. Inst., New Jersey

, 
CHADI D J

About CHADI D J

(NEC Res. Inst., New Jersey)

About NEC Res. Inst., New Jersey


Material：
Physical Review Letters  (Phys Rev Lett)

About Physical Review Letters


Volume： 75  Issue： 6  Page： 1134-1137  Publication year： Aug. 07, 1995 
JST Material Number： H0070A  ISSN： 0031-9007  CODEN： PRLTAO  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
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compound semiconductor

About compound semiconductor

,...
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Lattice defects in semiconductors 
(BK12040Q)

About Lattice defects in semiconductors

,  Electronic structure of impurites and defects 
(BM02100I)

About Electronic structure of impurites and defects

Terms in the title (4)：
Terms in the title
Keywords automatically extracted from the title.
II-VI半導体

About II-VI半導体

, 
バルク

About バルク

, 
格子不安定性

About 格子不安定性

, 
不純物補償

About 不純物補償


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