Art
J-GLOBAL ID：200902159719095616   Reference number：99A0040336

1.3μm room-temperature GaAs-based quantum-dot laser.

1.3μm室温GaAs系量子ドットレーザ
Author (5)：
HUFFAKER D L

About HUFFAKER D L

(Univ. Texas at Austin, Texas)

About Univ. Texas at Austin, Texas

, 
PARK G

About PARK G

(Univ. Texas at Austin, Texas)

About Univ. Texas at Austin, Texas

, 
ZOU Z

About ZOU Z

(Univ. Texas at Austin, Texas)

About Univ. Texas at Austin, Texas

, 
SHCHEKIN O B

About SHCHEKIN O B

(Univ. Texas at Austin, Texas)

About Univ. Texas at Austin, Texas

, 
DEPPE D G

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(Univ. Texas at Austin, Texas)

About Univ. Texas at Austin, Texas


Material：
Applied Physics Letters  (Appl Phys Lett)

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Volume： 73  Issue： 18  Page： 2564-2566  Publication year： Nov. 02, 1998 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)
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*quantum well laser

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,...
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Semiconductor lasers 
(BD04070L)

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Terms in the title (3)：
Terms in the title
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室温

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, 
GaAs

About GaAs

, 
量子ドットレーザ

About 量子ドットレーザ


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