Characterization of high-K dielectric ZrO<sub>2</sub> films annealed by rapid thermal processing.

HU Y-Z; TAY S-P

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J-GLOBAL ID：200902160596238822 Reference number：01A1029679

Characterization of high-K dielectric ZrO₂ films annealed by rapid thermal processing.

急速熱処理でアニールした高k誘電体ZrO₂膜の特性

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Volume： 19 Issue： 5 Page： 1706-1714 Publication year： Sep. 2001
JST Material Number： E0974A ISSN： 1071-1023 CODEN： JVTBD9 Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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Oxide thin films , Metal-insulator-semiconductor structures

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Characterization of high-K dielectric ZrO2 films annealed by rapid thermal processing.

Characterization of high-K dielectric ZrO₂ films annealed by rapid thermal processing.