X-ray photoelectron spectroscopic evaluation of valence band offsets for strained Si1-xGex,Si1-yCy, and Si1-x-yGexCy on Si(001).

KIM M; OSTEN H J

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J-GLOBAL ID：200902160909403390 Reference number：97A0586963

X-ray photoelectron spectroscopic evaluation of valence band offsets for strained Si_1-xGe_x,Si_1-yC_y, and Si_1-x-yGe_xC_y on Si(001).

Si(001)上の歪Si_1-xGe_x,Si_1-yC_yおよびSi_1-x-yGe_xC_yにおける価電子帯オフセットのX線光電子分光法による評価

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Material：
Volume： 70 Issue： 20 Page： 2702-2704 Publication year： May. 19, 1997
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Electronic structure of crystalline semiconductors , Electron spectroscopy

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