High Quality Homoepitaxial GaN Grown by Molecular Beam Epitaxy with NH<sub>3</sub> on Surface Cracking.

MAYER M; PELZMANN A; KAMP M; EBELING K J; TEISSEYRE H; NOWAK G; LESZCZYNSKI M; POROWSKI S; KARCZEWSKI G

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J-GLOBAL ID：200902161079219210 Reference number：98A0177142

High Quality Homoepitaxial GaN Grown by Molecular Beam Epitaxy with NH₃ on Surface Cracking.

表面亀裂を伴うNH₃を利用した分子線エピタクシーによる高品質ホモエピタキシャルGaNの成長

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Author (9)： , , , , , , , ,
Material：
Volume： 36 Issue： 12B Page： L1634-L1636 Publication year： Dec. 15, 1997
JST Material Number： F0599B ISSN： 0021-4922 Document type： Article
Article type：短報 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Semiconductor thin films , Excitons , Luminescence of semiconductors

Reference (12)：

1) S. Nakamura: MRS Internet J. Nitride Semicond. Res. 2 (1997) 5.
2) T. Detchprohm, K. Hiramatsu, N. Sowaki and I. Akasaki: J. Cryst. Growth 137 (1994) 170.
3) S. Nakamura, M. Senoh, N. Iwasa and S. Nagahama: Jpn. J. Appl. Phys. 34 (1995) 797
4) D. C. Reynolds, D. C. Look, W. Kim, O. Aktas, A. Botchkarev, A. Salvador, H. Morkoç and D. N. Talwar: J. Appl. Phys. 80 (1996) 594
5) M. Kamp, M. Mayer, A. Pelzmann and K. J. Ebeling: Mater. Res. Soc. Symp. Proc. 449 (1997) 162.

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High Quality Homoepitaxial GaN Grown by Molecular Beam Epitaxy with NH3 on Surface Cracking.

High Quality Homoepitaxial GaN Grown by Molecular Beam Epitaxy with NH₃ on Surface Cracking.