Growth and characterization of (La,Sr)(Al,Ta)O<sub>3</sub> single crystals as substrates for GaN epitaxial growth.

SHIMAMURA K; TABATA H; TAKEDA H; KOCHURIKHIN V V; FUKUDA T

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J-GLOBAL ID：200902162206993903 Reference number：99A0584470

Growth and characterization of (La,Sr)(Al,Ta)O₃ single crystals as substrates for GaN epitaxial growth.

GaNエピタキシャル成長基板としての(La,Sr)(Al,Ta)O₃単結晶の成長と評価

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Author (5)： , , , ,
Material：
Volume： 194 Issue： 2 Page： 209-213 Publication year： Nov. 1998
JST Material Number： B0942A ISSN： 0022-0248 Document type： Article
Article type：原著論文 Country of issue： Netherlands (NLD) Language： ENGLISH (EN)

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Crystal growth of oxides

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Growth and characterization of (La,Sr)(Al,Ta)O3 single crystals as substrates for GaN epitaxial growth.

Growth and characterization of (La,Sr)(Al,Ta)O₃ single crystals as substrates for GaN epitaxial growth.