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J-GLOBAL ID:200902162380183724   Reference number:94A0156259

Sublimation growth of SiC single crystalline ingots on faces perpendicular to the (0001) basal plane.

SiC単結晶インゴットの(0001)基底面に垂直な面上での昇華成長
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Volume: 135  Issue: 1/2  Page: 61-70  Publication year: Jan. 1994 
JST Material Number: B0942A  ISSN: 0022-0248  Document type: Article
Article type: 原著論文  Country of issue: Netherlands (NLD)  Language: ENGLISH (EN)
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Crystal growth of semiconductors 
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