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J-GLOBAL ID：200902163576754831   Reference number：02A0440599

InGaN量子井戸構造の内部電界効果の井戸幅依存性

Author (5)：
OMAE KUNITO

About OMAE KUNITO

(京大 大学院)

About 京大 大学院

, 
KAWAKAMI YOICHI

About KAWAKAMI YOICHI

(京大 大学院)

About 京大 大学院

, 
FUJITA SHIGEO

About FUJITA SHIGEO

(京大 大学院)

About 京大 大学院

, 
NARUKAWA YUKIO

About NARUKAWA YUKIO

(日亜化学工業)

About 日亜化学工業

, 
MUKAI TAKASHI

About MUKAI TAKASHI

(日亜化学工業)

About 日亜化学工業


Material：
応用物理学関係連合講演会講演予稿集  (Extended Abstracts. Spring Meeting. Japan Society of Applied Physics and Related Societies)

About 応用物理学関係連合講演会講演予稿集


Volume： 49th  Issue： 1  Page： 393  Publication year： Mar. 27, 2002 
JST Material Number： Y0054A  Document type： Proceedings
Article type： 短報  Country of issue： Japan (JPN)  Language： JAPANESE (JA)
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nitride

About nitride

,...
Semi thesaurus term：
Thesaurus term/Semi thesaurus term
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All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
窒化ガリウムインジウム

About 窒化ガリウムインジウム

,...
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Semiconductor-semiconductor contacts with Gr.13-15 element compounds 
(BM03082Y)

About Semiconductor-semiconductor contacts with Gr.13-15 element compounds

Terms in the title (5)：
Terms in the title
Keywords automatically extracted from the title.
InGaN

About InGaN

, 
量子井戸

About 量子井戸

, 
電界効果

About 電界効果

, 
井戸

About 井戸

, 
依存性

About 依存性


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