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J-GLOBAL ID:200902163583971040   Reference number:01A0665512

Fabrication and Proposition of High Sensitive Chemical Potential Sensor Used Charge Transfer Technique.

電荷転送技術を用いた高感度化学ポテンシャルセンサデバイス
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Volume: 101  Issue: 83(SDM2001 30-43)  Page: 57-61  Publication year: May. 25, 2001 
JST Material Number: S0532B  ISSN: 0913-5685  Document type: Proceedings
Article type: 原著論文  Country of issue: Japan (JPN)  Language: JAPANESE (JA)
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Other solid-state devices 
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