Art
J-GLOBAL ID:200902163583971040
Reference number:01A0665512
Fabrication and Proposition of High Sensitive Chemical Potential Sensor Used Charge Transfer Technique.
電荷転送技術を用いた高感度化学ポテンシャルセンサデバイス
-
Publisher site
Copy service
{{ this.onShowCLink("http://jdream3.com/copy/?sid=JGLOBAL&noSystem=1&documentNoArray=01A0665512©=1") }}
-
Access JDreamⅢ for advanced search and analysis.
{{ this.onShowJLink("http://jdream3.com/lp/jglobal/index.html?docNo=01A0665512&from=J-GLOBAL&jstjournalNo=S0532B") }}
Author (3):
,
,
Material:
Volume:
101
Issue:
83(SDM2001 30-43)
Page:
57-61
Publication year:
May. 25, 2001
JST Material Number:
S0532B
ISSN:
0913-5685
Document type:
Proceedings
Article type:
原著論文
Country of issue:
Japan (JPN)
Language:
JAPANESE (JA)
Thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
,...
JST classification (1):
JST classification
Category name(code) classified by JST.
Other solid-state devices
Terms in the title (4):
Terms in the title
Keywords automatically extracted from the title.
,
,
,
Return to Previous Page