Examination of tunnel junctions in the AlGaN/GaN system: Consequences of polarization charge.

SINGH M; ZHANG Y; SINGH J; MISHRA U

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J-GLOBAL ID：200902164157788641 Reference number：00A1061610

Examination of tunnel junctions in the AlGaN/GaN system: Consequences of polarization charge.

AlGaN/GaN系でのトンネル接合の評価分極電荷の結果

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Material：
Volume： 77 Issue： 12 Page： 1867-1869 Publication year： Sep. 18, 2000
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor-semiconductor contacts with Gr.13-15 element compounds , Semiconductor-metal contacts

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