Art
J-GLOBAL ID：200902164196970406
Reference number：98A0987451
Physical Properties of Heavily B-doped Microcrystalline Si-Ge Alloys and Schottky Barrier of B-Si-Ge/P-Si.
大量にBをドープした微結晶Si-GeアロイおよびB-Si-Ge/P-Si Schottky障壁の物理的性質
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Author (3)：
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Material：
Volume：
37
Issue：
10
Page：
5708-2713
Publication year：
Oct. 1998
JST Material Number：
G0520B
ISSN：
0021-4922
Document type：
Article
Article type：
原著論文
Country of issue：
Japan (JPN)
Language：
ENGLISH (EN)
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Semiconductor-metal contacts
Reference (23)：
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KOHNO, K. Jpn. J. Appl. Phys. 1984, 23, L674
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KOHNO, K. Jpn. J. Appl. Phys. 1986, 25, 955
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KOHONO, K. Jpn. J. Appl. Phys. 1987, 26, 302
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BRYA, W. J. Solid State Commun. 1973, 12, 253
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ABELES, B. Phys. Rev. 1962, 125, 44
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