Improvement of the photoluminescence from gallium nitride layers grown by MBE with an additional incident indium flux.

FOXON C T; HOOPER S E; CHENG T S; ORTON J W; REN G B; YA BER B; MERKULOV A V; NOVIKOV S V; TRET'YAKOV V V

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J-GLOBAL ID：200902164992292738 Reference number：99A0126776

Improvement of the photoluminescence from gallium nitride layers grown by MBE with an additional incident indium flux.

余分のインジウムフラックスがあるMBEにより成長させた窒化ガリウム層の光ルミネセンスの改善

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Material：
Volume： 13 Issue： 12 Page： 1469-1471 Publication year： Dec. 1998
JST Material Number： E0503B ISSN： 0268-1242 CODEN： SSTEET Document type： Article
Article type：短報 Country of issue： United Kingdom (GBR) Language： ENGLISH (EN)

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Luminescence of semiconductors

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