Effect of Epilayer Characteristics and Processing Conditions on the Thermally Oxidized SiO<sub>2</sub>/SiC Interface.

DAS M K; COOPER J A JR; MELLOCH M R

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J-GLOBAL ID：200902165430551346 Reference number：98A0562324

Effect of Epilayer Characteristics and Processing Conditions on the Thermally Oxidized SiO₂/SiC Interface.

熱酸化SiO₂/SiC界面へのエピタキシャル層特性と製造条件の影響

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Volume： 27 Issue： 4 Page： 353-357 Publication year： Apr. 1998
JST Material Number： D0277B ISSN： 0361-5235 Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor-semiconductor contacts without Gr.13-15 element compounds , Semiconductor thin films

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Effect of Epilayer Characteristics and Processing Conditions on the Thermally Oxidized SiO2/SiC Interface.

Effect of Epilayer Characteristics and Processing Conditions on the Thermally Oxidized SiO₂/SiC Interface.