Spectroscopic ellipsometry of Si<sub>1-x</sub>Ge<sub>x</sub> epilayers of arbitrary composition 0≦x≦0.255.

CARLINE R T; PICKERING C; ROBBINS D J; LEONG W Y; PITT A D; CULLIS A G

Art

J-GLOBAL ID：200902165649501379 Reference number：94A0279732

Spectroscopic ellipsometry of Si_1-xGe_x epilayers of arbitrary composition 0≦x≦0.255.

0≦x≦0.25の任意の組成をもつSi_1-xGe_xエピ層の分光偏光解析

Publisher site Copy service {{ this.onShowCLink("http://jdream3.com/copy/?sid=JGLOBAL&noSystem=1&documentNoArray=94A0279732&COPY=1") }}
Access JDreamⅢ for advanced search and analysis. {{ this.onShowJLink("http://jdream3.com/lp/jglobal/index.html?docNo=94A0279732&from=J-GLOBAL&jstjournalNo=H0613A") }}

Author (6)： , , , , ,
Material：
Volume： 64 Issue： 9 Page： 1114-1116 Publication year： Feb. 28, 1994
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

,...

To see more with JDream III (charged). {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=94A0279732&from=J-GLOBAL&jstjournalNo=H0613A") }}

Optical properties of condensed matter in general , Electronic structure of crystalline semiconductors

, ,

Return to Previous Page

Spectroscopic ellipsometry of Si1-xGex epilayers of arbitrary composition 0≦x≦0.255.

Spectroscopic ellipsometry of Si_1-xGe_x epilayers of arbitrary composition 0≦x≦0.255.