Depth profiling of silicon-hydrogen bonding modes in amorphous and microcrystalline Si:H thin films by real-time infrared spectroscopy and spectroscopic ellipsometry.

FUJIWARA H; KONDO M; MATSUDA A

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J-GLOBAL ID：200902166310419513 Reference number：02A0372504

Depth profiling of silicon-hydrogen bonding modes in amorphous and microcrystalline Si:H thin films by real-time infrared spectroscopy and spectroscopic ellipsometry.

実時間赤外分光と分光エリプソメトリーによるアモルファス及び微結晶Si:H薄膜におけるけい素-水素結合モードの深さフロフィル

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Author (3)： , ,
Material：
Volume： 91 Issue： 7 Page： 4181-4190 Publication year： Apr. 01, 2002
JST Material Number： C0266A ISSN： 0021-8979 CODEN： JAPIAU Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor thin films , Structure of amorphous semiconductors

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