Site-selective x-ray absorption fine structure: Selective observation of Ga local structure in DX center of Al<sub>0.33</sub>Ga<sub>0.67</sub>As:Se.

ISHII M; YOSHINO Y; TAKARABE K; SHIMOMURA O

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J-GLOBAL ID：200902166388299450 Reference number：99A0525580

Site-selective x-ray absorption fine structure: Selective observation of Ga local structure in DX center of Al_0.33Ga_0.67As:Se.

サイト選択x線吸収微細構造 Al_0.33Ga_0.67As:SeのDX中心におけるGaの局所構造の選択的観察

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Material：
Volume： 74 Issue： 18 Page： 2672-2674 Publication year： May. 03, 1999
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Lattice defects in semiconductors , Electronic structure of impurites and defects

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Site-selective x-ray absorption fine structure: Selective observation of Ga local structure in DX center of Al0.33Ga0.67As:Se.

Site-selective x-ray absorption fine structure: Selective observation of Ga local structure in DX center of Al_0.33Ga_0.67As:Se.