Art
J-GLOBAL ID：200902166906353781   Reference number：96A0495775

Improved Oxidation Procedures for Reduced SiO2/SiC Defects.

SiO2/SiC欠陥減少のために改善した酸化処理
Author (2)：
LIPKIN L A

About LIPKIN L A

(Cree Res. Inc., NC)

About Cree Res. Inc., NC

, 
PALMOUR J W

About PALMOUR J W

(Cree Res. Inc., NC)

About Cree Res. Inc., NC


Material：
Journal of Electronic Materials  (J Electron Mater)

About Journal of Electronic Materials


Volume： 25  Issue： 5  Page： 909-915  Publication year： May. 1996 
JST Material Number： D0277B  ISSN： 0361-5235  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
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silicon carbide

About silicon carbide

,...
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Materials of solid-state devices 
(NC03020K)

About Materials of solid-state devices

Terms in the title (4)：
Terms in the title
Keywords automatically extracted from the title.
SiO2

About SiO2

, 
SiC

About SiC

, 
欠陥

About 欠陥

, 
酸化処理

About 酸化処理


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