Deposition of extremely thin (Ba,Sr)TiO<sub>3</sub> thin films for ultra-large-scale integrated dynamic random access memory application.

HWANG C S; PARK S O; CHO H-J; KANG C S; KANG H-K; LEE S I; LEE M Y

Art

J-GLOBAL ID：200902166998142463 Reference number：95A1000339

Deposition of extremely thin (Ba,Sr)TiO₃ thin films for ultra-large-scale integrated dynamic random access memory application.

超LSI-DRAM用の極端に薄い(Ba,Sr)TiO₃薄膜の蒸着

Publisher site Copy service {{ this.onShowCLink("http://jdream3.com/copy/?sid=JGLOBAL&noSystem=1&documentNoArray=95A1000339&COPY=1") }}
Access JDreamⅢ for advanced search and analysis. {{ this.onShowJLink("http://jdream3.com/lp/jglobal/index.html?docNo=95A1000339&from=J-GLOBAL&jstjournalNo=H0613A") }}

Author (7)： , , , , , ,
Material：
Volume： 67 Issue： 19 Page： 2819-2821 Publication year： Nov. 06, 1995
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

,...

To see more with JDream III (charged). {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=95A1000339&from=J-GLOBAL&jstjournalNo=H0613A") }}

Thin films of other inorganic compounds , Ferroelectrics,antiferroelectrics and ferroelasticity , Memory units

, , , , ,

Return to Previous Page

Deposition of extremely thin (Ba,Sr)TiO3 thin films for ultra-large-scale integrated dynamic random access memory application.

Deposition of extremely thin (Ba,Sr)TiO₃ thin films for ultra-large-scale integrated dynamic random access memory application.