Art

J-GLOBAL ID：200902167223301570   Reference number：99A0442010

Large Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy and Laser-Induced Liftoff.

水素化物気相エピタクシーおよびレーザ誘起リフトオフによる大口径自立GaN基板

Author (6)： KELLY M K (Advanced Technol. Materials, Inc., Connecticut, USA) ,  VAUDO R P (Advanced Technol. Materials, Inc., Connecticut, USA) ,  PHANSE V M (Advanced Technol. Materials, Inc., Connecticut, USA) ,  GOERGENS L (Technische Univ. Muenchen, Garching, DEU) ,  AMBACHER O (Technische Univ. Muenchen, Garching, DEU) ,  STUTZMANN M (Technische Univ. Muenchen, Garching, DEU)
Material： Japanese Journal of Applied Physics. Part 2. Letters  (Japanese Journal of Applied Physics. Part 2. Letters & Express Letters)
Volume： 38  Issue： 3A  Page： L217-L219  Publication year： Mar. 01, 1999 
JST Material Number： F0599B  ISSN： 0021-4922  Document type： Article
Article type： 短報  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： *gallium nitride ,...
Semi thesaurus term： lift-off

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JST classification (1)： Semiconductor thin films  (BK14040E)

Reference (19)：

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• 5) Yu. V. Melnik, K. V. Vassilevski, I. P. Nikitina, A. I. Babanin, V. Yu. Davydov and V. A. Dmitriev: MRS Internet J. Nitride Semicond. Res. 2 (1997) 39.

Terms in the title (6)： 水素化物気相エピタクシー ,  レーザ誘起 ,  リフトオフ ,  大口径 ,  自立 ,  GaN