Art
J-GLOBAL ID:200902168253921250   Reference number:99A0133082

Atomic layer controlled growth of Si3N4 films using sequential surface reactions.

連続した表面反応を用いたSi3N4膜の原子層制御成長
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Material:
Volume: 418  Issue:Page: L14-L19  Publication year: Nov. 27, 1998 
JST Material Number: C0129B  ISSN: 0039-6028  Document type: Article
Article type: 短報  Country of issue: Netherlands (NLD)  Language: ENGLISH (EN)
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Thin films of other inorganic compounds 
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