Atomic layer controlled growth of Si<sub>3</sub>N<sub>4</sub> films using sequential surface reactions.

KLAUS J W; OTT A W; DILLON A C; GEORGE S M

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J-GLOBAL ID：200902168253921250 Reference number：99A0133082

Atomic layer controlled growth of Si₃N₄ films using sequential surface reactions.

連続した表面反応を用いたSi₃N₄膜の原子層制御成長

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Author (4)： , , ,
Material：
Volume： 418 Issue： 1 Page： L14-L19 Publication year： Nov. 27, 1998
JST Material Number： C0129B ISSN： 0039-6028 Document type： Article
Article type：短報 Country of issue： Netherlands (NLD) Language： ENGLISH (EN)

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Thin films of other inorganic compounds

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Atomic layer controlled growth of Si3N4 films using sequential surface reactions.

Atomic layer controlled growth of Si₃N₄ films using sequential surface reactions.