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J-GLOBAL ID：200902168293387621   Reference number：97A0391895

SOI Devices and Their Process Technologies. Contribution of Polished Surface Waviness to Final SOI Thickness Uniformity of Bonded Wafers through PACE Process.

PACE工程による,研磨された表面ウエイブネスの,ボンドされたウエハの最終SOI厚さ均一性への寄与

Author (3)： MITANI K (Shin-Etsu Handotai Co., Ltd., Annaka-shi, JPN) ,  NAKANO K (Shin-Etsu Handotai Co., Ltd., Annaka-shi, JPN) ,  ABE T (Shin-Etsu Handotai Co., Ltd., Annaka-shi, JPN)
Material： IEICE Transactions on Electronics (Institute of Electronics, Information and Communication Engineers)  (IEICE Trans Electron (Inst Electron Inf Commun Eng))
Volume： E80-C  Issue： 3  Page： 370-377  Publication year： Mar. 1997 
JST Material Number： L1370A  ISSN： 0916-8524  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： plasma etching ,...

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JST classification (1)： Manufacturing technology of solid-state devices  (NC03030V)

Reference (11)：

• MASZARA, W. P. Bonding of silicon wafers for silicon-on-insulator. J. Appl. Phys. 1989, 64, 4943
• IMAI, K. A new thinning method for obtaining less than 100-nm-thick Si film on wafer bonding. Jpn. J. Appl. Phys. 1991, 30, 1154
• YONEHARA, T. Epitaxial layer transfer by bond and etch back of porous Si. Appl. Phys. Lett. 1994, 64, 2108
• AUBERTON-HERVE, A. J. SOI materials for ULSI applications. SOI Technology (SEMI Technical Education Program, Semicon/West 95). 1995, 117
• YAMADA, A. 5th Intern. Workshop on future Electron Devices-3D Integration, Miyagi-Zao. 1988

Terms in the title (5)： 研磨 ,  ボンド ,  ウエハ ,  SOI ,  厚さ均一性