Art
J-GLOBAL ID：200902168392351736   Reference number：01A0192142

Critical Discussion on Unified 1/f Noise Models for MOSFETs.

MOSFETの統一1/f雑音モデルに関する批判的検討
Author (2)：
VANDAMME E P

About VANDAMME E P

(IMEC vzw, Leuven, BEL)

About IMEC vzw, Leuven, BEL

, 
VANDAMME L K J

About VANDAMME L K J

(Eindhoven Univ. Technol., Eindhoven, NLD)

About Eindhoven Univ. Technol., Eindhoven, NLD


Material：
IEEE Transactions on Electron Devices  (IEEE Trans Electron Devices)

About IEEE Transactions on Electron Devices


Volume： 47  Issue： 11  Page： 2146-2152  Publication year： Nov. 2000 
JST Material Number： C0222A  ISSN： 0018-9383  CODEN： IETDAI  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
*MOSFET

About MOSFET

,...
Semi thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
carrier

About carrier

,...
   To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=01A0192142&from=J-GLOBAL&jstjournalNo=C0222A") }}
JST classification (1)：
JST classification
Category name(code) classified by JST.
Transistors 
(NC03070N)

About Transistors

Terms in the title (2)：
Terms in the title
Keywords automatically extracted from the title.
MOSFET

About MOSFET

, 
雑音モデル

About 雑音モデル


Return to Previous Page

TOP

BOTTOM