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J-GLOBAL ID:200902169091365061   Reference number:97A0374761

Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy.

窒化シリコンの原子層制御成長と赤外反射吸収分光による成長のその場観察
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Volume: 112  Page: 75-81  Publication year: Mar. 1997 
JST Material Number: B0707B  ISSN: 0169-4332  Document type: Article
Article type: 原著論文  Country of issue: Netherlands (NLD)  Language: ENGLISH (EN)
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Semiconductor thin films 
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