Art

J-GLOBAL ID：200902169160122702   Reference number：98A0016836

Theory of Semiconductor Superjunction Devices.

半導体超接合素子の理論

Author (1)： FUJIHIRA T (Fuji Electric Co., Ltd., Matsumoto, JPN)
Material： Japanese Journal of Applied Physics. Part 1. Regular Papers, Short Notes & Review Papers  (Japanese Journal of Applied Physics. Part 1. Regular Papers, Brief Communications & Review Papers)
Volume： 36  Issue： 10  Page： 6254-6262  Publication year： Oct. 1997 
JST Material Number： G0520B  ISSN： 0021-4922  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： *semiconductor junction ,...
Semi thesaurus term： 超接合 ,...

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JST classification (2)： Electrical properties of interfaces in general  (BM03081H) ,  Transistors  (NC03070N)

Reference (15)：

• 1) C. Hu: Rec. Power Electronics Specialists Conf., San Diego, 1979 (IEEE, 1979) p. 385.
• 2) P. L. Hower, T. M. S. Heng and C. Huang: Tech. Dig. Int. Electron Device Meet., Washington D.C., 1983 (IEEE, 1983) p. 87.
• 3) H.-R. Chang and F. W. Holroyd: Ext. Abstr. 175th Soc. Meet., Los Angeles, 1989 (Electrochem. Soc., 1989) 89-1, p. 86.
• 4) S. Matsumoto, T. Ohno, H. Ishii and H. Yoshino: IEEE Trans. Electron Devices 41 (1994) 814.
• 5) R. K. Williams, W. Grabowski, M. Darwish, H. Yilmaz, M. Chang and K. Owyang: Proc. 8th Int. Symp. Power Semiconductor Devices and IC's, Maui, 1996 (IEEE, 1996) p. 53.

Terms in the title (2)： 超接合 ,  理論