Art
J-GLOBAL ID：200902169559903953
Reference number：99A0618600
High-temperature reliability of GaN metal semiconductor field-effect transistor and bipolar junction transistor.
GaN金属-半導体電界効果トランジスタならびにバイポーラ接合トランジスタの高温信頼性
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Author (2)：
,
Material：
Volume：
85
Issue：
11
Page：
7931-7934
Publication year：
Jun. 01, 1999
JST Material Number：
C0266A
ISSN：
0021-8979
CODEN：
JAPIAU
Document type：
Article
Article type：
原著論文
Country of issue：
United States (USA)
Language：
ENGLISH (EN)
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Measurement,testing and reliability of solid-state devices
, Transistors
Terms in the title (3)：
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,
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