Art
J-GLOBAL ID：200902170071419511   Reference number：00A1031986

The Effect of Copper on Gate Oxide Integrity.

ゲート酸化物の完全性におよぼす銅の影響
Author (4)：
LIN Y H

About LIN Y H

(National Chiao Tung Univ., Hsinchu, TWN)

About National Chiao Tung Univ., Hsinchu, TWN

, 
WU Y H

About WU Y H

(National Chiao Tung Univ., Hsinchu, TWN)

About National Chiao Tung Univ., Hsinchu, TWN

, 
CHIN A

About CHIN A

(National Chiao Tung Univ., Hsinchu, TWN)

About National Chiao Tung Univ., Hsinchu, TWN

, 
PAN F M

About PAN F M

(National Nano-Device Lab., Hsinchu, TWN)

About National Nano-Device Lab., Hsinchu, TWN


Material：
Journal of the Electrochemical Society  (J Electrochem Soc)

About Journal of the Electrochemical Society


Volume： 147  Issue： 11  Page： 4305-4306  Publication year： Nov. 2000 
JST Material Number： C0285A  ISSN： 1945-7111  CODEN： JESOAN  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)
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*gate (semiconductor)

About gate (semiconductor)

,...
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JST classification (1)：
JST classification
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Manufacturing technology of solid-state devices 
(NC03030V)

About Manufacturing technology of solid-state devices

Terms in the title (3)：
Terms in the title
Keywords automatically extracted from the title.
ゲート酸化物

About ゲート酸化物

, 
完全性

About 完全性

, 
銅

About 銅


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